pa ra m et er sy m bo l un it maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage forward rectified current (see fig. 1) maximum forward voltage at i o forward surge current, 8.3ms single half sine-wave superimposed on rated load (jedec method) maximum reverse current at 25c per leg (note1) page 1 qw -bb047 chip schottky barrier rectifier rev :a comchip t echnology co., l td. v rrm v rms v dc i o v f i fsm i r t j 60 42 60 8.0 0.75 175 5.0 50 100 70 100 v v v a v a ma c 0.85 operating temperature range storage temperature range t stg 4.0 c -55 to +150 3 2=4 dimensions in inches and ( millimeters ) t o-263/d2p ak 0.413(10.50) 0.394(10.00) 0.114(5.30) 0.098(4.40) 0.370(9.40) 0.327(8.30) 0.059(1.50) 0.031(0.80) 0.205(5.20) 0.189(4.80) 0.063(1.60) 0.055(1.30) 0.024(0.60) 0.014(0.35) 0.055(1.40) 0.047(1.20) 0.185(4.70) 0.169(4.30) 0.106(2.70) 0.091(2.30) reverse v oltage: 60 to 100 v olts forward current: 8.0 amp rohs device CDBD8060-G thru. cdbd8100-g o maximum ratings (at t a=25 c, unless otherwise noted) 8060-g cdbd 8100-g cdbd i r ma r jc c/w t ypical thermal resistance junction to case per leg -55 to +150 maximum reverse current at 100c per leg (note1) 3 2 1 4 features - batch process design , excellent power dissipation of fers better reverse leakage current and thermal resistance . - low profile surface mounted application in order to optimize board space . - low power loss , high ef ficiency . - high current capability , low forward voltage drop . - high surge capability . - guardring for overvoltage protection . - ultra high - speed switching . - silicon epitaxial planar chip , metal silicon junction . - lead - free parts meet environmental standards of mil - std -19500 /228 mechanical data polarity: as marked. - - w eight:1.46 gram(approx.). w eunting position: any - notes: 1. pulse t est: 300s pulse width, 1% duty cycle. case: t o-263/d2p ak, t ransfer molded. - - t erminals: solderable per mil-std-202, method 208. - epoxy: u/l 94-v0 rate flame retardant. c o m c h i p s m d d i o d e s p e c i a l i s t
fig .1- forward derating curve a v e r a g e f i r w a r d r e c t i f i e d c u r r e n t , ( a ) 1.0 10 100 fig .3- t ypical forward characteristic per leg i n s t a n t a n e o u s f o r w a r d c u r r e n t , ( a ) 0.1 c d b d 8 0 6 0 - g instantaneous forward v oltage, ( v ) case t emperature, (c) fig .2- peak forward surge current 1 2 3 4 5 6 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0 2 0 0 chip schottky barrier rectifier page 2 qw -bb047 rev :a comchip t echnology co., l td. ra ting and characteristic cur ves (CDBD8060-G thru. cdbd8100-g) 7 8 9 5 0 1 5 0 2 0 0 2 5 0 3 0 0 0 1 0 0 1 0 1 0 0 1 number of cycles at 60hz 0.1 0.3 0.5 0.7 0.9 1.1 c d b d 8 1 0 0 - g 1.0 i n s t a n t a n e o u s r e v e r s e c u r r e n t , ( m a ) peraent of rated v oltage peak reverse v oltage, (%) fig .4- t ypical reverse characteristics 0.1 0.001 10 0 20 40 60 120 140 80 100 0.01 c d b d 8 0 6 0 - g c d b d 8 1 0 0 - g t j = 2 5 c t j = 7 5 c t j = 1 2 5 c p e a k f o r w a r d s u r g e c u r r e n t , ( a ) c o m c h i p s m d d i o d e s p e c i a l i s t
chip schottky barrier rectifier page 3 qw -bb047 rev : a comchip t echnology co., l td. suggested p ad layout part number marking code marking code CDBD8060-G standard packaging size (inch) 0.374 (mm) 9.50 2.50 16.90 0.098 0.665 10.80 0.425 x2 1.10 0.043 b c x1 a t o - 2 6 3 / d 2 p a k cdbd8100-g c x 1 x 2 y 1 a b y 2 1 1.40 0.449 y2 3.50 0.138 y1 xxxxxx / xxxxxxx = product type marking code xxxxxx sd8l60 sd8l100 c a s e t y p e t o - 2 6 3 / d 2 p a k 5 0 t u b e ( p c s ) t u b e p a c k 2 , 0 0 0 b o x ( p c s ) c o m c h i p s m d d i o d e s p e c i a l i s t
|
